Modeling of Drain Current for Grooved-Gate MOSFET

Abstract

A drain current model of grooved-gate MOSFET which is based on the difference of the channel depth distance along the channel from the source to the drain in cylindrical coordinate is presented in this paper. From the analysis, the potential of grooved-gate is related to geometry structure parameters the angle (Ѳ0) and radius (r0) of concave corner as well as channel depth (d). The presence of corner effect will influence to the drain potential, drain current characteristics as well as the other electrical characteristics, such as conductance (gm) and transconductance (gd). In this result, model shows effect of corner with improvement of the device the characteristics especially the reduction of short channel effect (SCE) althought drain current value grooved-gate MOSFET of is slightly less than the ordinary MOSFET.