The Corner Effects of a Curved-Channel MOSFET

Abstract

The corner effects of a curved channel MOSFET are proposed. Various several curved channel angles are applied and effects of the corner identified through Devedit TCAD Silvaco. These simulations can understand electrical characteristics and effects of corner if the channel of device is curved, such as grooved gate MOSFET and vertical MOSFET. In this paper, the results show corner effect of the long channel devices can suppress leakage current but giving rise to DIBL, Subthreshold Swing (SS) and threshold voltage (Vth). The effects of corner can suppress short- channel effects and hot carrier effects, due to the potential barrier generated at the corner region. The device has also high driving current and better controllability of channel since the width of gates are increased, the corner formed by the conterminous gates may affect the electric field and surface potential in the corner region of the channel. Keywords: MOSFET, curved-channel, corner effect, simulation, electrical characteristics