Hidrogenasi tipis Bermanium Amorf (a-Ga) dengan metoda plasma lucutan pijar Rf dan penentuan konduktivitasnya

Said , Nofri Faruzza (1999) Hidrogenasi tipis Bermanium Amorf (a-Ga) dengan metoda plasma lucutan pijar Rf dan penentuan konduktivitasnya. Undergraduate thesis, FMIPA UNDIP.

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Abstract

Telah dilakukan proses deposisi atom hidrogen pada lapisan tipis germanium amorf dengan metoda plasma lucutan pijar RF. Sebelum pendeposisian, lapisan tipis germanium amorf dibuat dengan metoda evaporasi. Di lanj utkan dengan analisis spektrometer inframerah sebagai penentuan ikatan unsur dalam lapisan tipis a-Ge:H. Dari percobaan diperoleh konduktivitas lapisan tipis a-Ge:H tertinggi dengan variasi suhu substrat saat deposisi (hidrogenasi) pada suhu 573 K sebesar (1,7958 ± 0,0041) x 10-3 C2-I cm-I dan untuk variasi suhu semikonduktivitas intrinsik pada suhu 343 K sebesar (1634,8620 ± 4,1856) K-2-I cm-I. Dari analisis spektrurn inframerah dengan spektrometer IR diduga puncak serapan ikatan Ge-H pada bilangan gelombang 1620,2 cm-I. Dari basil disimpulkan bahwa atom hidrogen yang terdeposisi dalam lapisan tipis a-Ge:H berasal dari hidrogenasi lapisan tipis a-Ge. Konduktivitas a-Ge:H dapat meningkat dengan variasi suhu substrat saat deposisi dan variasi suhu semikonduktivitas intrinsik bahan. A deposition process of hydrogen atom on amorphous germanium thin film by using RF plasma glow discharge has been done. The amorphous germanium (a-Ge) thin film is made by evaporation method before the depositioning. Spectrometry infrared analysis for determination of element bonding of a-Ge:H thin film was used in this research. Result of this experiment show that the highest conductivity of a-Ge:H thin film with variation of substrate's temperature on depositioning (hydrogenation) is (1,7958 ± 0,0041) x 10-3 ohm-I cm-1 on 573 K temperature and for the temperature variation of intrinsic semiconductivity is (1634,8620 ± 4,1856) ohm" cm-1 at 343 K. From the infrared spectrum analysis by IR spectrometer it is predicted that the absorption peak for Ge-H bound at the wave number of 1620,2 cm-I. The conclution from the result is hydrogen atomic which deposited in a-Ge:H thin film derives from hydrogenation process of a-Ge thin film. The conductivity of a-Ge:H can be increased with the temperature variation both of substrate on deposition and material intrinsic semiconductivity.

Item Type:Thesis (Undergraduate)
Subjects:Q Science > QC Physics
Divisions:Faculty of Science and Mathematics > Department of Physics
ID Code:30447
Deposited By:Mr UPT Perpus 1
Deposited On:31 Oct 2011 09:05
Last Modified:31 Oct 2011 09:05

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