Penentuan mobilitas dan konduktivitas pada semikonduktor jenis silikon tipe-N dan tipe-P

Yunus A , Abdul Hamid (1996) Penentuan mobilitas dan konduktivitas pada semikonduktor jenis silikon tipe-N dan tipe-P. Undergraduate thesis, FMIPA Undip.

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Abstract

Telah dilakukan penelitian terhadap Silikon Tipe-N (Phospor dan Tipe-P (Boron.) untuk menentukan nilai Mobilitas dan Konduktivitas bahan tersebut pada suhu kamar. Nilai Mobilitas (t) ditentukan berdasar pada Tetapan Hall (RH) yang diperoleh melalui percobaan Efek Hall dan nilai konduktivitas (a) ditentukan melalui pengamatan terhadap tegangan V yang timbul b:ila semikonduktor dialiri arus listrik I. Adapun hasil percobaan yang diperoleh adalah sebagai berikut : Untuk Silikon Tipe-N Konduktivitas (1000,4 ± 7,8) x 104.0-1.cm-1 dan Mobilitas (859,9 ± 7,6) 2 -1 cm .volt .detik Untuk Silikon Tipe-P : Konduktivitas (50,0 ± 0,3) x 10-2.0-1.CM dan Mobilitas (450,1 * 5,5) 2 -1 cm -volt .detik The examinations on Type-N Silicon (Phospor) and Type-P Silicon (Boron)have been done to determine the value of Mobility and Conductivity of those materials in chamber temperature. The value of mobility (p)is determined based on Hall's resolve which is obtained through Hall Effect and the value of conductivity (a) is determined through observation on the voltage (V) that appears if electricity (I) flows semiconductor. The result of the examinations are as follows : For Type-N Silicon : Conductivity (1000,4 ± 7,8) x 10-4Q-1cm-1 and Mobility (859,9 ± 7,6) cm.volt-1 second . For Type--P Silicon : Conductivity (50,0 ± 0,3) x 10-2-1cm-1 and Mobility (450,1 ± 5,5) cm2 volt-1. second-1

Item Type:Thesis (Undergraduate)
Subjects:Q Science > QC Physics
Divisions:Faculty of Science and Mathematics > Department of Physics
ID Code:30294
Deposited By:Mr UPT Perpus 1
Deposited On:26 Oct 2011 08:31
Last Modified:26 Oct 2011 08:31

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