MIKROSTRUKTUR LAPISAN TIPIS SEMIKONDUKTOR GALIUM NITRIDA YANG DITUMBUHKAN MENGGUNAKAN METODE CHEMICAL SOLUTION DEPOSITION DENGAN VARIASI LAJU SPIN COATER

Abstract

Galium Nitride (GaN) thin film have been deposited on Si substrate using Chemical solution Deposition (CSD) methode through spin coating technique. The influence of spin coater rate to the GaN thin films microstructure such as grain size, thickness and surface roughness was investigated . Gallium citrate amine which is dissolved in ethylene diamine and N2 gas were used is Ga source and N source. The solution Gallium citrate amine molarity is 0.6 M and N2 gas flow rate was kept at 2 sccs. The spin coater rate was adjusted at 1000 rpm, 1250 rpm, 1500 rpm, 1750 rpm and 2000 rpm. GaN thin films were heated at temperature of 900ºC for 2 hour under N2 atmosphere. The atomic composition and microstructure of deposited GaN thin films were characterized using Energy Dispersive of X-ray (EDX) and Scanning Electron Microscopy (SEM). The atomic composition analyze indicates that GaN thin films is occupied by more Ga. The GaN thin films which have near ideal stoichiometry was found in deposited thin film at 1500 rpm. SEM image shows the thickness, grain size and surface roughness of GaN thin film is decrease as the spin coater rate increase.