Mikrostruktur Semikonduktor GaN di Atas Substrat Silikon Dengan Metode Sol-Gel

Sutanto, Heri and Nurhasanah, Iis and Istadi, Istadi and Maryanto, Maryanto and Ambikawati, Wahyu and Marlini, Nofi (2010) Mikrostruktur Semikonduktor GaN di Atas Substrat Silikon Dengan Metode Sol-Gel. BERKALA FISIKA, 13 (2). pp. 55-60. ISSN 1410 - 9662



Gallium nitride (GaN) semiconductor thin films have been successfully deposited on Si substrate (004) by sol-gel method. Gel prepared from the crystal gallium-citrate-amines. These crystals formed from a solution containing the ions Ga+3 and citric acid (CA). Gel in place on the substrate and then rotated with a speed of 1100 rpm. The gel layers are obtained and then placed on the programmable furnace. Deposition temperature varied of 800, 900 and 1000oC in a nitrogen gas environment during 2 hour. The crystal quality of GaN thin films have characterized by XRD measurement. The surface morphology and cross section of the films observed by SEM. The film compositions determined by EDX characterization. The results showed that all the GaN thin films on silicon substrate have oriented polycrystalline structure. The crystal quality of GaN film is formed is influenced by the deposition temperature. In a deposition temperature range is used, increasing the deposition temperature can improve the crystal quality of GaN films.

Item Type:Article
Uncontrolled Keywords:GaN Thin Films; Spin-Coating Technique; Silicon Substrate
Subjects:Q Science > QC Physics
Divisions:Faculty of Science and Mathematics > Department of Physics
ID Code:26459
Deposited By:Ms. Wien Admin
Deposited On:28 Mar 2011 10:32
Last Modified:28 Mar 2011 10:32

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