Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD

Saragih, Horasdia and Hasniah, Hasniah and Sustini, Euis and Sukirno, Sukirno (2010) Studi Sifat Termal Prekursor In(TMHD)3 Untuk Menumbuhkan Lapisan Tipis In2O3 dengan Teknik MOCVD. BERKALA FISIKA, 13 (1). pp. 19-26. ISSN 1410 - 9662

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Abstract

The In2O3 thin films have been deposited on quartz substrate by MOCVD technique using In(TMHD)3 as a metal organic precurcor. Thermal properties of In(TMHD)3 material have been investigated by analyses of TG-DTA curve and FTIR spectrum to determine the value of In2O3 deposition parameters. Based on TG-DTA curve and FTIR spectrum analyses, we find that: (1) melting point of In(TMHD)3 powder is 175oC; (2) In(TMHD)3 powder starts to evaporate at 184oC; (3) partial oxidation of In(TMHD)3 in Ar/atmosfer accur at 260oC; and (4) dissosiation of TMHD ligand from indium metal element happened in the temperature range 300oC – 400oC. According to these results, we maintaned growth condition for deposition of In2O3: the temperature of In(TMHD)3 bubbler (Tb) = 200oC; the pressure of In(TMHD)3 bubbler (Pb) = 260 Torr; the rate of argon gas flow to carried out the vapor of In(TMHD)3 = 50 sccm; the rate of oxygen gas = 50 sccm; and temperature of substrate = 300oC. In 120 minutes, the thickness of deposited In2O3 thin films, the rate of deposition, and the roughness of film surface are about 0.2 μm, 1.6x10-3 μm/menit and 70 nm, respectively.

Item Type:Article
Uncontrolled Keywords:In(TMHD)3 precursor, In2O3, thin films, thermal properties, MOCVD.
Subjects:Q Science > QC Physics
Divisions:Faculty of Science and Mathematics > Department of Physics
ID Code:26454
Deposited By:Ms. Wien Admin
Deposited On:28 Mar 2011 10:12
Last Modified:28 Mar 2011 10:12

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