Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN

Rusdiana, Dadi and Hasanah, Lilik and Suhendi, Endi (2010) Mekanisme Hamburan Defek Statis Dan Vibrasi Termal Terhadap Mobilitas Elektron Pada Film Tipis GaN. BERKALA FISIKA, 13 (1). pp. 39-44. ISSN 1410 - 9662

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Abstract

Electrons Mobility in GaN thin films has been determined for temperature variation using approach method to the relaxation time due to the influence of static defect scattering and thermal vibrations. The simulation results show that electron mobility is strongly influenced by environmental temperature, except for the scattering of neutral impuritas type that does not affect the value of the charge carrier mobility even though the external temperature was varied.

Item Type:Article
Uncontrolled Keywords:Electrons Mobility, defect static, thermal vibration
Subjects:Q Science > QC Physics
Divisions:Faculty of Science and Mathematics > Department of Physics
ID Code:26451
Deposited By:Ms. Wien Admin
Deposited On:28 Mar 2011 09:56
Last Modified:28 Mar 2011 09:56

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