PENGARUH VARIASI TEMPERATUR PENUMBUHAN TERHADAP KARAKTERISTIK SIFAT LISTRIK FILM TIPIS GaN DI ATAS Si (111) DENGAN METODE PA-MOCVD

Abstract

The thin film of galium nitride has been grown on Si(111) substrates by plasma assisted metalorganic chemical vapor deposition in the range temperature 625 – 700 oC. We made ohmic contact by aluminium evaporation on thin film GaN. Electrical characterization of GaN thin film by Hall efect measurement to measure carrier mobility, carrier concentration and resistivity. From the result Hall characterization that was found that Hall mobility, carrier concentration and resistivity are between 6,7 – 757,8 cm2/V.s, 4,6 x 1018 – 8,8 x 1019 cm-3 and 1,8 x 10-3 – 1,6 x 10-2 ohm cm. The highest Hall mobility is 757,8 cm2/V.s in growth temperature 675 oC.