PENGARUH LAJU ALIR GAS NITROGEN TERHADAP INTENSITAS EMISI OPTIK PLASMA NITROGEN YANG DIBANGKITKAN OLEH GELOMBANG MIKRO 2,45 GHZ DENGAN METODA OPTICAL EMISSION SPECTROSCOPY

Abstract

The measurement of optical emission intensity of nitrogen plasma induced by 2.45 GHz microwave plasma source with optical emission spectroscopy (OES) method has been done. The experiment is conducted with variation of 99.999% nitrogen gas flow rate were in the range of 90 to 120 sccm. The spectrum peaks of optical emission of nitrogen plasma show the excitation state of neutral molecule N2*. The first peak at 260 nm is categorized as fourth positive system (4.PS) with energy level transition of D3∑+u → B3 Πg, while the rest of the peaks at 283, 319, and 364 nm are categorized as second positive system (2.PS) with energy level transition of C3 Πu → B3 Πg. The value of emission intensity decreases with the increase of nitrogen gas flow rate. The optimum parameter of nitrogen gas flow rate of 90 sccm is obtained. The optimum parameter can be used to deposition GaN and AlxGa1-xN thin films by plasma assisted-metalorganic chemical vapor deposition (PA-MOCVD) method with flat and smooth surface morphology and cross-section.